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| 07/28/09 - GlobalFoundries Outlines 22 nm Roadmap - Semiconducteur International "GlobalFoundries (Sunnyvale, Calif.) plans to apply embedded silicon carbon (eSiC) stressors on its 22 nm nFET transistors, and is likely to use through-silicon vias (TSVs) to connect a fast SOI-based DRAM layer to a logic die, said John Pellerin, director of technology development at the IBM/GlobalFoundries Alliance in Fishkill, N.Y." |
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