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AMD-Spansion ORNAND Special
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Two better than one!
Spansion Special
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AMD Facilities
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The result of a uniquely structured international joint venture known as Fujitsu AMD Semiconductor Limited (Spansion), the current facilities in Aizu-Wakamatsu are dedicated to volume production of Flash memory devices, and combined are capable of processing more than 20,000 eight-inch wafers per week utilizing the most advanced processes.

JV1
The first Spansion facility (JV1) commenced volume production of 4- and 16-megabit Flash memory chips on 0.5-micron technology in the fourth quarter of 1994. Since then, the facility has migrated to 0.32 and 0.23-micron technology. The JV1 facility includes 65,950 square feet of Class 1 clean room space housed in a 276,000 square-foot building.

JV2
Groundbreaking for the second joint-venture facility (JV2) occurred in March of 1996, and first shipments began in the fourth quarter of 1997. The 300,300 square-foot facility includes approximately 89,700 square feet of Class 1 clean room space, and uses an advanced 0.23-micron process technology.

JV3
In July of 2000, Spansion broke ground for its third Flash memory fab in Aizu-Wakamatsu. FASL Fab JV3 is now producing advanced Flash memory devices on 0.17 micron technology. This $1.5 billion facility encompasses 110,000 square feet of clean room space. JV3 encompasses 459,000 total square feet, including a shell for future expansion that can accommodate
12 inch (300mm) wafer production.

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09/27/05 Spansion said to be set to sample 90nm 1Gbit ORNAND flash from October - DigiTimes
"The 1Gbit MCP will include NOR flash, single-transistor pseudo-SRAM (1T PSRAM) and ORNAND in a single-chip solution, the sources noted. According to Spansion, the 90nm MirrorBit made ORNAND will be manufactured at its Fab 25 in Austin"

09/20/05 High-Density Flash Memory Solution from Spansion
Spansion LLC, the Flash memory venture of AMD (NYSE:AMD) and Fujitsu Limited (TOKYO:6702), today showed silicon of its single-chip 1 Gbit (Gb) GL NOR Flash memory and demonstrated working silicon of its 1Gb Ornand Flash memory based on
90nm MirrorBit(TM) technology. Manufactured at Spansion's flagship Fab 25 facility in Austin, Texas, Spansion(TM) 90nm MirrorBit technology is the foundation for a compelling high-density Flash memory roadmap, featuring products combining the density, performance, reliability and cost structure required for wireless and embedded applications.

11/09/04
Spansion Details NOR/NAND Hybrid Roadmap - Electronic News
"In order to meet the growing demands of the flash memory market, Fujitsu and AMD’s flash memory subsidiary
Spansion LLC unveiled plans to develop a new “ORNAND” flash memory architecture that combines the best of NOR code execution with NAND data storage capabilities in a single MirrorBit product"

11/08/04
Spansion unveils MirrorBit product roadmap scaling to 8-Gbit flash memory on 65nm Litho
Spansion LLC laid out an ambitious three-year vision and strategic road map, outlining plans to scale its MirrorBit technology to 8-gigabit densities on 65-nanometer lithography to meet the growing demands of the entire Flash market - from wireless handsets and embedded systems to detachable cards and USB drives. In addition, the company announced plans to develop a new "ORNAND" Flash memory architecture that brings together the best of NOR code execution and NAND data storage capabilities in a single product based on MirrorBit technology.
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