11/06/03 Analyst Day
|The result of a uniquely structured international joint venture known as Fujitsu AMD Semiconductor Limited (Spansion), the current facilities in Aizu-Wakamatsu are dedicated to volume production of Flash memory devices, and combined are capable of processing more than 20,000 eight-inch wafers per week utilizing the most advanced processes.
The first Spansion facility (JV1) commenced volume production of 4- and 16-megabit Flash memory chips on 0.5-micron technology in the fourth quarter of 1994. Since then, the facility has migrated to 0.32 and 0.23-micron technology. The JV1 facility includes 65,950 square feet of Class 1 clean room space housed in a 276,000 square-foot building.
Groundbreaking for the second joint-venture facility (JV2) occurred in March of 1996, and first shipments began in the fourth quarter of 1997. The 300,300 square-foot facility includes approximately 89,700 square feet of Class 1 clean room space, and uses an advanced 0.23-micron process technology.
In July of 2000, Spansion broke ground for its third Flash memory fab in Aizu-Wakamatsu. FASL Fab JV3 is now producing advanced Flash memory devices on 0.17 micron technology. This $1.5 billion facility encompasses 110,000 square feet of clean room space. JV3 encompasses 459,000 total square feet, including a shell for future expansion that can accommodate 12 inch (300mm) wafer production.
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|Spansion and TSMC Team to Manufacture Innovative Flash Memory Technology
Leading Flash and Foundry Suppliers Partner to Supplement Manufacturing for Spansion's 110 Nanometer MirrorBit(tm) Technology
Spansion LLC, the Flash memory venture of AMD (NYSE:AMD) and Fujitsu Limited (TSE:6702), and Taiwan Semiconductor Manufacturing Company (TSE: 2330, NYSE: TSM) today announced a manufacturing agreement that will augment Spansion's internal production of its 110 nanometer (nm) MirrorBit(tm) technology. Pursuant to the agreement, TSMC will supply foundry manufacturing capabilities for Spansion's family of GL, PL and WS wireless products and GL embedded products based on 110nm MirrorBit technology.
TSMC will phase Spansion's 110nm process technologies into its production lines exclusively for use in Spansion's products. Initially, Spansion's 110nm MirrorBit technology will be fabricated on 200mm wafers. The target production ramp date at TSMC is the second quarter of 2006.
"Our partnership with TSMC will help augment our internal production capability and allow us to more quickly migrate to next-generation technologies," Bertrand Cambou, president and CEO of Spansion. "Together, we believe we can create a powerful team to compete in the Flash memory market, one of the fastest growing segments of the semiconductor industry. Our collaboration will also give us additional flexibility in our business model as we continue to meet customer demand for our MirrorBit technology. "
"Spansion is a highly innovative company in a growing market," said TSMC CEO Dr. Rick Tsai. "When combined with TSMC's manufacturing muscle and industry-leading customer partnerships, this combination makes for a powerful win-win relationship."
About MirrorBit Technology
Spansion's award-winning MirrorBit technology is a proprietary technology, which stores two bits of data in a single memory cell, doubling the density of each memory cell. MirrorBit technology requires fewer manufacturing steps, resulting in higher yields and lower costs, eliminating at least 10 percent of the total manufacturing steps and 40 percent of the most critical manufacturing steps, as compared to floating gate MLC NOR technology.
The Spansion wireless GL product family, with a 1.8-volt and/or 3-volt interface, enables code and data applications in low-end, mid-range and higher-end mobile phones. The Spansion wireless PL product family, with a 3-volt interface, is used for a broad range of mobile phones, from entry level, basic audio-only handsets to audio and data capable phones with higher resolution color displays.
Spansion's wireless WS product family is optimized for higher-end mobile phones with capabilities such as polyphonic ring tones, enhanced color displays, higher resolution cameras, and larger internal storage for multimedia content including music, videos and pictures. The WS family combines a high-performance burst-mode 1.8-volt interface with Simultaneous Read Write and Advanced Sector Protection features at 64-megabit to 256-megabit densities for code and data requirements.
The Spansion GL-N product family for the embedded market combines expanded storage capacity with high performance and security to enable the next generation of home and automotive electronics, telecom and networking equipment. The GL-N family also includes compatible 512-,
256- and 128-megabit devices to aid customers who design numerous products based on a single platform. Software, pinout and package compatibility allows designers to upgrade, cost-reduce or otherwise modify existing products quickly and easily, without redesigning circuit boards and re-architecting software.
The 256-megabit densities of the WS family and the GL-N family are currently manufactured in volume at the company's JV-3 manufacturing facility in Aizu-Wakamatsu, Japan; and are planned for manufacture with TSMC.
Spansion Cautionary Statement
This release contains forward-looking statements, which are made pursuant to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Investors are cautioned that forward-looking statements in this release involve risks and uncertainties that could cause actual results to differ materially from current expectations. Risks include the possibility that we may not be able to migrate to, or otherwise obtain, 300mm wafer capacity; to develop new manufacturing technologies using smaller wafer sizes such as 90nm or 65nm; to timely meet our planned production ramp schedule with TSMC; and to obtain manufacturing capacity sufficient to meet customer demand for our products. We urge investors to review in detail the risks and uncertainties in Spansion's Registration Statement on Form S-1, as amended, filed with the Securities and Exchange Commission, and AMD's filings with the Securities and Exchange Commission, including but not limited to its Annual Report on form 10-K for the year ended December 26, 2004, and AMD's Quarterly Report on Form 10-Q for the quarter ended June 26, 2005.
Spansion, the Flash memory venture of AMD and Fujitsu, is the largest company in the world dedicated exclusively to developing, designing, and manufacturing Flash memory products. In fiscal 2004, Spansion's total net sales were approximately $2.3 billion. The company offers the broadest NOR Flash memory portfolio in the industry, for use in the wireless, automotive, networking, telecommunications and consumer electronics markets. The company's portfolio is supported by a worldwide network of advanced manufacturing facilities, system-level expertise and dedicated design support, and an unwavering commitment to our customers' success.
TSMC is the world's largest dedicated semiconductor foundry, providing the industry's leading process technology and the foundry industry's largest portfolio of process-proven library, IP, design tools and reference flows. The company operates two advanced twelve-inch wafer fabs, five eight-inch fabs and one six-inch wafer fab. TSMC also has substantial capacity commitments at its wholly-owned subsidiary, WaferTech and TSMC (Shanghai), and its joint venture fab, SSMC. In early 2001, TSMC became the first IC manufacturer to announce a 90-nm technology alignment program with its customers. TSMC's corporate headquarters are in Hsinchu, Taiwan.
|AMD-Fujitsu Spansion (ex-FASL) News - 08/11/05|
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