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Visit AMD Dresden Fab 30
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Two better than one!
FASL Takaku plant
The result of a uniquely structured international joint venture known as Fujitsu AMD Semiconductor Limited (Spansion), the current facilities in Aizu-Wakamatsu are dedicated to volume production of Flash memory devices, and combined are capable of processing more than 20,000 eight-inch wafers per week utilizing the most advanced processes.

JV1
The first Spansion facility (JV1) commenced volume production of 4- and 16-megabit Flash memory chips on 0.5-micron technology in the fourth quarter of 1994. Since then, the facility has migrated to 0.32 and 0.23-micron technology. The JV1 facility includes 65,950 square feet of Class 1 clean room space housed in a 276,000 square-foot building.

JV2
Groundbreaking for the second joint-venture facility (JV2) occurred in March of 1996, and first shipments began in the fourth quarter of 1997. The 300,300 square-foot facility includes approximately 89,700 square feet of Class 1 clean room space, and uses an advanced 0.23-micron process technology.

JV3
In July of 2000, Spansion broke ground for its third Flash memory fab in Aizu-Wakamatsu. FASL Fab JV3 is now producing advanced Flash memory devices on 0.17 micron technology. This $1.5 billion facility encompasses 110,000 square feet of clean room space. JV3 encompasses 459,000 total square feet, including a shell for future expansion that can accommodate
12 inch (300mm) wafer production.

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High-Density Flash Memory Solution from Spansion

1 Gb NOR and ORNAND devices expand code and data storage capabilities for wireless and embedded applications.

Spansion LLC, the Flash memory venture of AMD (NYSE:AMD) and Fujitsu Limited (TOKYO:6702), today showed silicon of its single-chip 1 Gbit (Gb) GL NOR Flash memory and demonstrated working silicon of its 1Gb ORNAND Flash memory based on 90nm MirrorBit(TM) technology. Manufactured at Spansion's flagship Fab 25 facility in Austin, Texas, Spansion(TM) 90nm MirrorBit technology is the foundation for a compelling high-density Flash memory roadmap, featuring products combining the density, performance, reliability and cost structure required for wireless and embedded applications.

"Scaling
MirrorBit technology to 90 nanometers in 2005 is an important milestone," said Bertrand Cambou, president and CEO of Spansion. "Customers prefer NOR architectures for code execution due to their higher reliability, higher read performance and ease of use. By scaling MirrorBit technology to even higher densities on 90 nanometer technology with both our NOR and Orand architectures, we are enabling our customers to continue to enjoy the benefits of MirrorBit technology for code storage and also expanding their use of MirrorBit technology for data storage in wireless and embedded devices."

During an event held at Fab 25, Spansion conducted a live demonstration of a
1Gb ORNAND device based on MirrorBit technology at 90nm for use as data storage in a wireless handset application. Using a handset reference design equipped with Spansion NOR Flash memory for code storage and a 1Gb MirrorBit Ornand device for data storage, Spansion representatives demonstrated multimedia features including camera, camcorder, music and video playback. The demonstration highlighted the high read performance of Spansion products, enabling quick phone boot-up and video playback, as well as write performance fast enough for a QVGA camcorder (320x240 pixels) recording at 15 frames per second.

Read performance impacts how long it takes for users to turn on their phone, operate different functions and applications such as games and access key content such as videos and music. Better read performance will improve the user experience with these multimedia features on wireless phones.
MirrorBit at 90nm addresses both embedded code and data storage applications, which have traditionally been served by either NOR or NAND architectures. Spansion has achieved working silicon of a single-chip 1Gb GL NOR device, the highest density on the market. The company expects the device to deliver high read performance to satisfy the high-density code and data storage needs in many embedded applications.

Spansion also provided further details for its 90nm MirrorBit product roadmap, including samples of 1Gb devices with both NOR and ORNAND architectures planned for this year, and plans for a 2Gb density ORNAND device by mid next year. In addition, the company expects to sample its very high performance 1.8-volt 512Mb NOR device in early 2006. Spansion also plans to begin production of 65nm MirrorBit technology in 2006.

About MirrorBit Technology:
MirrorBit technology is Spansion's innovative Flash memory technology that features high yields and low-cost structure compared to traditional floating gate technology.
MirrorBit is manufactured using a non-conductive storage element and uses 40 percent fewer of the most critical manufacturing steps than floating gate technologies, leading to higher yields and ultimately higher densities and higher performing products produced cost effectively.

Cautionary Statement:
This release contains forward-looking statements that are made pursuant to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Investors are cautioned that the forward-looking statements in this release involve risks and uncertainties that could cause actual results to differ materially from the company's current expectations. Risks that the company considers to be the important factors that could cause actual results to differ materially from those set forth in the forward-looking statements include the possibility that demand for the company's Flash memory products will be lower than currently expected; that OEMs will increasingly choose NAND-based Flash memory products over NOR- and
ORNAND-based Flash memory products for their applications; that customer acceptance of MirrorBit technology will not continue to increase; that there will be a lack of customer acceptance of Orand-based Flash memory products; that competitors may introduce new memory technologies that may make the company's Flash memory products uncompetitive or obsolete; that the company may not achieve its current product and technology introduction or implementation schedules; and that the company will not be able to raise sufficient capital to enable it to establish leading-edge capacity to meet product demand and maintain market share. We urge investors to review in detail the risks and uncertainties in the company's Securities and Exchange Commission filings, including but not limited to the company's Registration Statement on Form S-1 and AMD's Quarterly Report on Form 10-Q for the quarter ended June 26, 2005.

Spansion, the Spansion logo, MirrorBit, Orand, and combinations thereof, are trademarks of Spansion LLC. AMD is a trademark of Advanced Micro Devices, Inc. Other names used are for informational purposes only and may be trademarks of their respective owners.

About Spansion

Spansion, the Flash memory venture of AMD and Fujitsu, is the largest company in the world dedicated exclusively to developing, designing, and manufacturing Flash memory products. In fiscal 2004, Spansion's total net sales were approximately $2.3 billion. The company offers the broadest NOR Flash memory portfolio in the industry, for use in the wireless, automotive, networking, telecommunications and consumer electronics markets. The company's portfolio is supported by a worldwide network of advanced manufacturing facilities, system-level expertise and dedicated design support, and an unwavering commitment to our customers' success.

Spansion, the Spansion logo, MirrorBit, ORNAND and combinations thereof, are trademarks of Spansion LLC. AMD is a trademark of Advanced Micro Devices, Inc. Other names used are for informational purposes only and may be trademarks of their respective owners.
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